W9nk90z equivalent datasheet, cross reference, circuit and application notes in pdf format. W9nk90z equivalent p9nk90 p9nk90z f9nk90z mosfet 900v 8a to220 stp9nk90z mosfet 8a 900v to220 stf9nk90z. This testing procedure is for use with a digital multimeter in the diode testrange with a minimum of 3. May 2010 doc id 9479 rev 7 117 17 stb9nk90z, stf9nk90z stp9nk90z, stw9nk90z nchannel 900 v, 1. Stfnk50z mosfet nch 500v 11a to220fp stmicroelectronics datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the buildup of static electricity ref jedecjesd625a and jedecjstd033.
Hi, im trying to control a commoncathode rgb led strip with an arduino. Silicon nchannel power mosfet r cs8n65f a9h general description. These parts are sold individually or in valuepacks, eg. Marking of electronic components, smd codes w1, w1, w1. Note ltspice is a trademark and simulation software of adi analog devices, inc. P channel power mosfet high voltage integral protection diode available in to3 to204aa and ceramic surface mount packages note. Transistors, power, mosfet, nchannel, radhard based on type strh8n10 escc detail specification no.
Here you can find a wide variety of types and values of electronic parts from the worlds leading manufacturers. Dimart 9a 900v n channel power mosfet transistor stw9nk90z. The led strip uses 12v, so i am trying to use an npn transistor 2n2222a to step the voltage up to 12v, which is then used to switch the mosfet irf540, since the irf540 needs 10v at the gate to switch. Irfnxxxx also available with pins 1 and 3 reversed. For mosfet paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies. Marking of electronic components, smd codes w0, w01. The operation of the mosfet as a switch is easily tested with just a dmm using the diode test function. Components have to be tested for the respective application. Third generation power mosfets from vishay provide the designer with the best combination of fast switching, ruggedized. W9nk90z pdf, w9nk90z description, w9nk90z datasheets. J ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 6n90lta3t 6n90gta3t to220 g d s tube. July 2006rev 411616stb9nk90z stfpnk90zstp9nk90z stw9nk90znchannel 900v 1. Fqp9n90cfqpf9n90c 900v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. W9nk90z datasheet, w9nk90z datasheets, w9nk90z pdf, w9nk90z circuit. Description the supermeshtm series is obtained through an. The supermeshtm series is obtained through an extreme optimization of sts. General description features the mdf9n50f uses advanced magnachips v 500v ds mosfet technology, which provides low onstate i 8.
W9nk90z datasheet, w9nk90z pdf, w9nk90z data sheet, w9nk90z manual, w9nk90z pdf, w9nk90z, datenblatt, electronics w9nk90z, alldatasheet, free, datasheet, datasheets, data sheet, datas sheets, databook, free datasheet. By providing low rdson, c issand crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Flashair wireless lan model w03 product specification. Channel chipfet features offers an ultra low rdson solution in the chipfet package miniature chipfet package 40% smaller footprint than tsop. Std3nk80z, std3nk80z1 stf3nk80z, stp3nk80z nchannel 800 v, 3. Extremely high dvdt capability 100% avalanche tested. Every day, we send 5000 shipments and we ensure that they arrive in the shortest time available. If this datasheet link is broken, the datasheet may still be available at. Stmicroelectronics, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Marking of electronic components, smd codes w0, w01, w02, w03, w04, w05, w06, w08, w08, w09, w0, w04, w09. These highvoltage devices are zenerprotected nchannel power mosfets developed using the supermesh technology by stmicroelectronics, an. Extremely high dvdt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeatibility. Tme has over 800 employees, who provide expert support at each stage of the ordering process our offer includes 300,000 electronic components from 950 producers since 1990, we have been expanding our operations dynamically and increasing our global potential.
The supermeshtm series is obtained through an extreme optimization of sts well established stripbased powermeshtm layout. Tphr8504pl 12v 300v mosfets toshiba electronic devices. Understanding gate charge and using it to assess switching performance device application note an608a. Marking of electronic components, smd codes w1, w1, w1, w10, w11, w12, w12, w, w14, w15, w16, w17, w18f, w19, w1a, w1d, w1t, w1w, w1p, w1s, w1t. Vdss 650 v cs8n65f a9h, the silicon nchannel enhanced id 8 a pdtc25. European space agency see transistors, power, mosfet, nchannel, radhard based on type buy25cs54a01. Rd9fe hl discrete semiconductors jotrin electronics. K7a60w datasheet 600v, nch mosfet toshiba, tk7a60w datasheet, k7a60w pdf, k7a60w pinout, k7a60w manual, k7a60w schematic, k7a60w equivalent. The rd9fe parts manufactured by hl are available for purchase at jotrin electronics website. The source is connected to ground or the positive voltage, in a pchannel mosfet, the drain is connected to. Free device maximum ratings rating symbol value unit collector. Thnswgaacqbf 1 20150928 flashair wireless lan model w03 product specification version 3. Ti offers robust nchannel devices with optimal resistance and gate charge enabling high frequency operation and higher power density. Equivalent output capacitance qgs 3 total gate charge, cycle 1.